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Yokoyama, Atsushi; Oba, Hironori; Hashimoto, Masashi; Katsumata, Keiichi; Akagi, Hiroshi; Ishii, Takeshi*; Oya, Akio*; Arai, Shigeyoshi*
Applied Physics B, 79(7), p.883 - 889, 2004/11
Times Cited Count:10 Percentile:42(Optics)Silicon isotope separation has been done utilizing the Infrared Multiphoton Dissociation of SiF irradiated with two-frequency CO laser lights. The two-frequency excitation method improved the separation efficiency with keeping the high enrichment factors. For example, SiF with the Si fraction of 99.4 % was obtained at 40.0 % dissociation of SiF after the simultaneous irradiation of 100 pulses with 966.23 cm photons (0.089 J/cm) and 954.55 cm photons (0.92 J/cm), while 1000 pulses were needed to obtain 99.0 % of Si at 27.2 % dissociation in the case of single frequency irradiation at 954.55 cm (0.92 J/cm). The single-step enrichment factors of Si and Si increased with increasing SiF pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases.
Fujie, Makoto; *; *; *
Journal of Nuclear Science and Technology, 23(4), p.330 - 337, 1986/00
Times Cited Count:46 Percentile:96.4(Nuclear Science & Technology)no abstracts in English
; Saito, Keiichiro; Shiba, Koreyuki
Journal of Nuclear Science and Technology, 20(5), p.439 - 440, 1983/00
Times Cited Count:53 Percentile:99.42(Nuclear Science & Technology)no abstracts in English